Special Section on Alternative Lithographic Technologies

Study of device mass production capability of the character projection based electron beam direct writing process technology toward 14 nm node and beyond

[+] Author Affiliations
Yoshinori Kojima

e-Shuttle Inc., 1500 Mizono, Tado-cho, Kuwana, Mie 511-0192, Japan

Yasushi Takahashi, Masaki Takakuwa, Shuzo Ohshio

e-Shuttle Inc., 1500 Mizono, Tado-cho, Kuwana, Mie 511-0192, Japan

Shinji Sugatani

e-Shuttle Inc., 1500 Mizono, Tado-cho, Kuwana, Mie 511-0192, Japan

Ryo Tujimura, Hiroshi Takita, Kozo Ogino, Hiromi Hoshino

Fujitsu Semiconductor Limited, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan

Yoshio Ito, Masaaki Miyajima

Fujitsu VLSI Ltd., 2-1844-2 Kozoji, Kasugai, Aichi 487-0013, Japan

Jun-ichi Kon

Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 211-8588, Japan

J. Micro/Nanolith. MEMS MOEMS. 11(3), 031403 (Aug 07, 2012). doi:10.1117/1.JMM.11.3.031403
History: Received April 19, 2012; Revised May 31, 2012; Accepted July 2, 2012
Text Size: A A A

Abstract.  Techniques to appropriately control the key factors for a character projection (CP) based electron beam direct writing technology for mass production are shown and discussed. In order to achieve accurate CD control, the CP technique using the master CP is adopted. Another CP technique, the Packed CP, is used to obtain suitable shot count. For the alignment on the some critical layers which normally have an even surface, the process removing SiO2 material filled in the alignment marks is added and then the alignment marks can be detected using electron beam. The proximity effect correction using the simplified electron energy flux model and the hybrid exposure are used to obtain enough process margins. As a result, the sufficient CD accuracy, overlay accuracy, and yield are obtained on the 65 nm node device. Due to the proper system control, more than 10,000 production wafers have been successfully exposed so far without any major system downtime. It is shown that those techniques can be adapted to the 32 nm node production with slight modifications. It is expected that by using the Multi Column Cell exposure method, those techniques will be applicable to the rapid establishment for the 14 nm node technology.

Figures in this Article
© 2012 Society of Photo-Optical Instrumentation Engineers

Citation

Yoshinori Kojima ; Yasushi Takahashi ; Masaki Takakuwa ; Shuzo Ohshio ; Shinji Sugatani, et al.
"Study of device mass production capability of the character projection based electron beam direct writing process technology toward 14 nm node and beyond", J. Micro/Nanolith. MEMS MOEMS. 11(3), 031403 (Aug 07, 2012). ; http://dx.doi.org/10.1117/1.JMM.11.3.031403


Tables

Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.