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Low cost fabrication and testing of high isolation radio frequency MEMS switches

[+] Author Affiliations
Abhay B. Joshi, Shashikala Gangal

University of Pune, Department of Electronic Science, Ganeshkhind Road, Pune 411 007 India

R. Gandhi, K. Natarajan

Bharat Electronics Ltd., MEMS Divsion, Outer Ring Road, Bangalore 560045 India

Dhananjay Bodas

Aghakar Research Institute, Centre for Nanobioscience, Agarkar Road, Pune 411 004 India

J. Micro/Nanolith. MEMS MOEMS. 11(3), 033001 (Aug 14, 2012). doi:10.1117/1.JMM.11.3.033001
History: Received November 13, 2011; Revised May 1, 2012; Accepted May 17, 2012
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Abstract.  Radio frequency MEMS switches are key components in low power communication systems. The present paper reports fabrication of MEMS based series and shunt switches for actuation voltage in the range of 30 to 50 V. Focusing on a low cost fabrication approach, the switches were designed for higher isolation of >25dB and low insertion loss of <0.5dB. Aluminum was chosen as a cost effective alternative for the fabrication of the transmission line and structural beam. The shunt and series switches were investigated for a frequency range of 1 to 20 GHz. The shunt switch shows the insertion loss of 0.5 dB and isolation of 28dB and the series switch shows the insertion loss of 0.7 dB and isolation of 27dB at 20 GHz. The measured actuation voltage was 30 V for the shunt switch and 42 V for the series switch.

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© 2012 Society of Photo-Optical Instrumentation Engineers

Citation

Abhay B. Joshi ; R. Gandhi ; K. Natarajan ; Dhananjay Bodas and Shashikala Gangal
"Low cost fabrication and testing of high isolation radio frequency MEMS switches", J. Micro/Nanolith. MEMS MOEMS. 11(3), 033001 (Aug 14, 2012). ; http://dx.doi.org/10.1117/1.JMM.11.3.033001


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