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Fabrication of pyramidal corrugated quantum well infrared photodetector focal plane arrays by inductively coupled plasma etching with BCl3/Ar

[+] Author Affiliations
Jason Sun

U.S. Army Research Laboratory, Adelphi, Maryland 20783

Kwong-Kit Choi

U.S. Army Research Laboratory, Adelphi, Maryland 20783

Unchul Lee

U.S. Army Research Laboratory, Adelphi, Maryland 20783

J. Micro/Nanolith. MEMS MOEMS. 11(4), 043003 (Oct 01, 2012). doi:10.1117/1.JMM.11.4.043003
History: Received July 6, 2012; Revised August 17, 2012; Accepted August 31, 2012
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Abstract.  We developed an optimized inductively coupled plasma etching process to produce gallium arsenide (GaAs) pyramidal corrugated quantum well infrared photodetector focal plane arrays (C-QWIP FPAs). A statistically designed experiment was performed to optimize the etching parameters. The resulting parameters are discussed in terms of the effect on the etching rate and profile. This process uses a small amount of mask corrosion and the control of the etching mask gap to give a 45 deg to 50 deg V-groove etching profile, which is independent of the crystal orientation of GaAs. In the etching development, scanning electron microscope was used to observe the surface morphology and the pattern profile. In addition, x-ray photoelectron spectroscopy was used to obtain the elemental composition and contamination of the etching surface. It is found that extremely small stoichiometric change and surface damage of the etching surface can be achieved while keeping a relatively high etching rate and 45degV-groove etching profile. This etching process is applied to the fabrication of pyramidal C-QWIP FPAs successfully, which are expected to have better performance than the regular prism-shaped C-QWIPs according to electromagnetic modeling.

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© 2012 Society of Photo-Optical Instrumentation Engineers

Citation

Jason Sun ; Kwong-Kit Choi and Unchul Lee
"Fabrication of pyramidal corrugated quantum well infrared photodetector focal plane arrays by inductively coupled plasma etching with BCl3/Ar", J. Micro/Nanolith. MEMS MOEMS. 11(4), 043003 (Oct 01, 2012). ; http://dx.doi.org/10.1117/1.JMM.11.4.043003


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