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Reaction-diffusion power spectral density

[+] Author Affiliations
Chris A. Mack

Lithoguru.com, 1605 Watchhill Road, Austin, Texas 78703

J. Micro/Nanolith. MEMS MOEMS. 11(4), 043007 (Oct 20, 2012). doi:10.1117/1.JMM.11.4.043007
History: Received June 26, 2012; Revised August 22, 2012; Accepted September 25, 2012
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Abstract.  Characterization of a stochastic process in lithography, giving rise to photoresist line-edge roughness (LER), requires elucidation of the power spectral density (PSD) for that process. Thus, any analytical model for LER requires an analytical model for the PSD. Using a previously derived formulation for the reaction-diffusion autocorrelation function, the PSD can be derived from its Fourier transform. The resulting analytical expression for the reaction-diffusion PSD provides an interesting and useful form that will aid modeling work in LER prediction. Numerically calculating the PSD for the stochastic development rate shows that this same analytical expression approximately matches the simulation but with a correlation length that decreases as the amount of development noise increases.

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© 2012 Society of Photo-Optical Instrumentation Engineers

Topics

Diffusion

Citation

Chris A. Mack
"Reaction-diffusion power spectral density", J. Micro/Nanolith. MEMS MOEMS. 11(4), 043007 (Oct 20, 2012). ; http://dx.doi.org/10.1117/1.JMM.11.4.043007


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