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Areal electron beam lithography using a magnetic reticle

[+] Author Affiliations
Aleksandar Aleksov

Components Research, Intel Corporation5000 W. Chandler Boulevard, Chandler, Arizona 85226

Dmitri E. Nikonov

Components Research, Intel Corporation5000 W. Chandler Boulevard, Chandler, Arizona 85226

Shawna Liff

Components Research, Intel Corporation5000 W. Chandler Boulevard, Chandler, Arizona 85226

J. Micro/Nanolith. MEMS MOEMS. 12(1), 013010 (Feb 11, 2013). doi:10.1117/1.JMM.12.1.013010
History: Received October 25, 2012; Revised January 15, 2013; Accepted January 23, 2013
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Abstract.  We propose an electron beam lithography system that would allow for pattern transfer from a magnetic reticle to a wafer. The reticle consists of a patterned magnetic media where magnetization of a nanomagnet stores a value of a pixel. Information stored on this media is transferred as a pattern onto the electron-resist via spin-polarized electrons photo-generated from the reticle and spin-filtered along the way to the wafer to generate contrast. It is speculated that such a system offers significantly higher throughput than a multielectron-beam lithography system and may outpace in flexibility, cost and throughput extreme ultra-violet-lithography systems that are currently being developed, while at least matching the resolution of both lithography systems.

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© 2013 Society of Photo-Optical Instrumentation Engineers

Citation

Aleksandar Aleksov ; Dmitri E. Nikonov and Shawna Liff
"Areal electron beam lithography using a magnetic reticle", J. Micro/Nanolith. MEMS MOEMS. 12(1), 013010 (Feb 11, 2013). ; http://dx.doi.org/10.1117/1.JMM.12.1.013010


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