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Aluminum-coated silicon wafer bonding with tin intermediate layer

[+] Author Affiliations
Zhiyuan Zhu

Peking University, National Key Laboratory of Nano/Micro Fabrication Technology, Institute of Microelectronics, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, China

Min Yu

Peking University, National Key Laboratory of Nano/Micro Fabrication Technology, Institute of Microelectronics, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, China

Dayu Tian

Peking University, National Key Laboratory of Nano/Micro Fabrication Technology, Institute of Microelectronics, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, China

Yingwei Zhu

Southwest China Institute of Electronic Technology, 48 Chadianzi East Street, Chengdu 610036, China

Peiquan Wang

Peking University, National Key Laboratory of Nano/Micro Fabrication Technology, Institute of Microelectronics, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, China

Chenchen Liu

Peking University, National Key Laboratory of Nano/Micro Fabrication Technology, Institute of Microelectronics, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, China

Wei Wang

Peking University, National Key Laboratory of Nano/Micro Fabrication Technology, Institute of Microelectronics, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, China

Min Miao

Peking University, National Key Laboratory of Nano/Micro Fabrication Technology, Institute of Microelectronics, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, China

Beijing Information Science & Technology University, Institute of Information Microsystem, Beisihuan Middle Road No. 35, Beijing 100101, China

Jing Chen

Peking University, National Key Laboratory of Nano/Micro Fabrication Technology, Institute of Microelectronics, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, China

Yufeng Jin

Peking University, National Key Laboratory of Nano/Micro Fabrication Technology, Institute of Microelectronics, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, China

J. Micro/Nanolith. MEMS MOEMS. 12(1), 013012 (Feb 11, 2013). doi:10.1117/1.JMM.12.1.013012
History: Received August 23, 2012; Revised January 23, 2013; Accepted January 29, 2013
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Abstract.  Metallic wafer bonding is becoming a key enabling technology in microelectromechanical systems packaging and heterogeneous integration. We realize the bonding of silicon (Si) wafers coated with aluminum (Al) film with thin tin (Sn) film as the intermediate layer. The bonding pressure is 0.25 MPa. The bonding is achieved at temperatures as low as 280°C after a short bonding time of 3 min. The average bonding strength is 9.9 MPa. The minimum variation of bonding layer thickness is about 0.2 μm within a large area. A fracture surface study and a cross-section analysis are conducted and the bond mechanism is investigated. It is found that the fracture mainly occurs at Al/Sn interface during the shear test. Two bonding conditions are compared and the results show that applying bonding pressure before heating is important to achieve a uniform bonding layer.

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© 2013 Society of Photo-Optical Instrumentation Engineers

Citation

Zhiyuan Zhu ; Min Yu ; Dayu Tian ; Yingwei Zhu ; Peiquan Wang, et al.
"Aluminum-coated silicon wafer bonding with tin intermediate layer", J. Micro/Nanolith. MEMS MOEMS. 12(1), 013012 (Feb 11, 2013). ; http://dx.doi.org/10.1117/1.JMM.12.1.013012


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