Special Section on Photomasks for Extreme Ultraviolet Lithography

Illuminating extreme ultraviolet lithography mask defect printability

[+] Author Affiliations
Karen D. Badger

IBM Microelectronics, 1000 River Street, Essex Junction, Vermont 05452

Zhengqing John Qi

IBM Microelectronics, 1000 River Street, Essex Junction, Vermont 05452

Emily Gallagher

IBM Microelectronics, 1000 River Street, Essex Junction, Vermont 05452

Kazunori Seki

Toppan Photomasks Inc., 1000 River Street, Essex Junction, Vermont 05452

Gregory McIntyre

IBM Microelectronics, 255 Fuller Road, Albany, New York 12203

J. Micro/Nanolith. MEMS MOEMS. 12(2), 021004 (Mar 01, 2013). doi:10.1117/1.JMM.12.2.021004
History: Received September 21, 2012; Revised December 20, 2012; Accepted February 12, 2013
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Abstract.  For the next few years, the extreme ultraviolet lithography (EUVL) community must learn to find mask defects using nonactinic inspection wavelengths. Nonactinic light cannot always determine the exact nature of the defect, whether it is a particle, pattern, or defect in the multilayer. It also cannot predict which defects will induce phase errors and which will induce amplitude errors on wafers. Correlating the signature of the defect as seen by a nonactinic inspection tool and on wafer resist image will inject essential knowledge into the nonactinic defect classification. This paper will explore the correlation between EUVL mask defect signatures detected (and not detected) at both 193 nm and e-beam inspection wavelengths and wafer-printable defects. The defects of interest will be characterized at mask level using atomic force microscopy and critical dimension scanning microscopy. Simulations will be deployed to explain the signatures illuminated by both EUVL and 193 nm exposures. This work addresses the gap between inspection sensitivity at nonactinic wavelengths and EUVL mask defect printability, and provides generalized understanding of how the two views differ.

© 2013 Society of Photo-Optical Instrumentation Engineers

Citation

Karen D. Badger ; Zhengqing John Qi ; Emily Gallagher ; Kazunori Seki and Gregory McIntyre
"Illuminating extreme ultraviolet lithography mask defect printability", J. Micro/Nanolith. MEMS MOEMS. 12(2), 021004 (Mar 01, 2013). ; http://dx.doi.org/10.1117/1.JMM.12.2.021004


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