Special Section on Photomasks for Extreme Ultraviolet Lithography

Efficient simulation of extreme ultraviolet multilayer defects with rigorous data base approach

[+] Author Affiliations
Peter Evanschitzky

Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen, Germany

Feng Shao

Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen, Germany

Andreas Erdmann

Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen, Germany

J. Micro/Nanolith. MEMS MOEMS. 12(2), 021005 (Mar 01, 2013). doi:10.1117/1.JMM.12.2.021005
History: Received September 26, 2012; Revised January 18, 2013; Accepted February 12, 2013
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Abstract.  This paper presents the extension of the well-established, rigorous, electromagnetic field solver waveguide for the efficient and fully rigorous simulation of patterned extreme ultraviolet (EUV) masks with multilayer defects. The new simulation method uses a rigorously computed multilayer defect data base in combination with on demand modeling of diffraction from absorber structures. Typical computation times are in the range of seconds to a few minutes. Selected simulation examples, including a defect printing exploration and a defect repair, demonstrate the functionality and the capability to perform fast, highly accurate, and flexible EUV multilayer defect computations.

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© 2013 Society of Photo-Optical Instrumentation Engineers

Citation

Peter Evanschitzky ; Feng Shao and Andreas Erdmann
"Efficient simulation of extreme ultraviolet multilayer defects with rigorous data base approach", J. Micro/Nanolith. MEMS MOEMS. 12(2), 021005 (Mar 01, 2013). ; http://dx.doi.org/10.1117/1.JMM.12.2.021005


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