Contact hole shrink process using DSA is one of the most promising applications for semiconductor device manufacturing. It is expected to provide superior critical dimension uniformity (CDU) for contact holes in diameter. In this work, we investigate the feasibility of DSAL for semiconductor manufacturing in terms of DSAL process window. Through the correlation between hole prepattern CD and DSA hole pattern CD, the target prepattern CD was determined based on contact edge roughness (CER) and hole open yield. Some hole patterning processes have been proposed by DSAL such as chemoepitaxy using PMMA cylinders,3 pillars and spheres,4,5 template using PMMA cylinders,6,7,8 trench using PMMA cylinders,9 and resist prepattern using organic and Si blend polymer.10 In this paper, we demonstrated simple graphoepitaxy using hole-type prepatterns and cylinder-forming PS--PMMA block copolymer (BCP). The key points of our process are spin-on-carbon (SOC) prepattern and wet development. Prepattern material is required to have some special properties such as surface free energy control, solvent resistance to the solvent of BCP solution, thermal resistance on BCP anneal, etching resistance on pattern transfer, and so on. In previous works, guiding pattern materials such as silicon oxide8 and negative tone development resist11 have been reported. We selected SOC as a guiding material from a cost and etching resistance point of view. Inorganic materials need more pattern transfer processes than SOC to form guide patterns. SOC has etching resistance on pattern transfer compared to resist. With respect to wet development, chain scission of PMMA is induced by DUV irradiation and the PMMA domain becomes selectively soluble to organic solvent. Wet development provides greater etching margin compared to dry development, which utilizes the difference of RIE rate between PS and PMMA. This is the reason we selected SOC prepattern and wet development.