Special Section on Alternative Lithographic Technologies

Defect source analysis of directed self-assembly process

[+] Author Affiliations
Paulina Rincon Delgadillo

Imec, Kapeldreef 75, B-3001, Leuven, Belgium

Katholieke Universiteit Leuven, Department of Electrical Engineering (ESAT), Kasteelpark Arenberg 10, B-3001, Leuven, Belgium

University of Chicago, Institute for Molecular Engineering, 5747 South Ellis Avenue, Jones 217, Chicago, Illinois 60637

Mayur Suri, Stephane Durant, Andrew Cross, Venkat R. Nagaswami

KLA-Tencor Corporation, 1 Technology Drive, Milpitas, California 95035

Dieter Van Den Heuvel, Roel Gronheid

Imec, Kapeldreef 75, B-3001, Leuven, Belgium

Paul Nealey

University of Chicago, Institute for Molecular Engineering, 5747 South Ellis Avenue, Jones 217, Chicago, Illinois 60637

J. Micro/Nanolith. MEMS MOEMS. 12(3), 031112 (Aug 20, 2013). doi:10.1117/1.JMM.12.3.031112
History: Received April 26, 2013; Revised June 26, 2013; Accepted July 12, 2013
Text Size: A A A

Abstract.  As design rule shrinks, it is essential that the capability to detect smaller and smaller defects should improve. There is considerable effort going on in the industry to enhance immersion lithography using directed self-assembly (DSA) for the 14-nm design node and below. While the process feasibility is demonstrated with DSA, material issues as well as process control requirements are not fully characterized. The chemical epitaxy process is currently the most-preferred process option for frequency multiplication, and it involves new materials at extremely small thicknesses. The image contrast of the lamellar line/space pattern at such small layer thicknesses is a new challenge for optical inspection tools. The study focuses on capability of optical inspection systems to capture DSA unique defects such as dislocations and disclination clusters over the system and wafer noise. The study is also extended to investigate wafer-level data at multiple process steps and to determine the contribution from each process step and materials using defect source analysis methodology. The added defect pareto and spatial distributions of added defects at each process step are discussed.

Figures in this Article
© 2013 Society of Photo-Optical Instrumentation Engineers

Citation

Paulina Rincon Delgadillo ; Mayur Suri ; Stephane Durant ; Andrew Cross ; Venkat R. Nagaswami, et al.
"Defect source analysis of directed self-assembly process", J. Micro/Nanolith. MEMS MOEMS. 12(3), 031112 (Aug 20, 2013). ; http://dx.doi.org/10.1117/1.JMM.12.3.031112


Tables

Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.