Special Section on Alternative Lithographic Technologies

Thermally controlled alignment for wafer-scale lithography

[+] Author Affiliations
Euclid E. Moon

Massachusetts Institute of TechnologyCambridge, Massachusetts 02139

Saurabh A. Chandorkar

Intel CorporationSanta Clara, California 95054

Sidlgata V. Sreenivasan

University of Texas at Austin, Austin, Texas 78712

R. Fabian Pease

Stanford University, Stanford, California 94305

J. Micro/Nanolith. MEMS MOEMS. 12(3), 031109 (Aug 28, 2013). doi:10.1117/1.JMM.12.3.031109
History: Received April 17, 2013; Revised June 23, 2013; Accepted July 9, 2013
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Abstract.  A primary limitation in nanoimprint lithography is lack of alignment consistency between multiple fields. Simultaneous imprinting of several fields is highly desirable for enhanced throughput, yet placement errors in template fabrication and other factors limit field-to-field accuracy. Here, we describe a method to improve overlay simultaneously across many fields via continuous, in situ control of localized temperature distributions. In this method, interferometric moiré alignment signals from an array of microscopes are analyzed to form a map of distortion and control the distribution of heat in real time. Thermal cross-talk between fields is minimized using a microchannel wafer chuck. We demonstrate simultaneous operation of feedback loops that stabilize alignment over a 100-mm span to 0.5 nm (3σ).

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© 2013 Society of Photo-Optical Instrumentation Engineers

Citation

Euclid E. Moon ; Saurabh A. Chandorkar ; Sidlgata V. Sreenivasan and R. Fabian Pease
"Thermally controlled alignment for wafer-scale lithography", J. Micro/Nanolith. MEMS MOEMS. 12(3), 031109 (Aug 28, 2013). ; http://dx.doi.org/10.1117/1.JMM.12.3.031109


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