A simulator known a LAIPH™ EUV Defect Printability Simulator (Luminescent technologies, California) was employed to predict the impact of the inclination angle of the PD on wafer printed image in this work. The parameters for the simulations were as follows: numerical aperture , (dipole), chief , , and . The blank structure was Ru-capped multilayer (, 40 pairs of ). The defect sizes were 4, 6, and 8 nm in depths and 50 nm in full-width at half-maximum. The inclination angles of the PDs were set from to 8 deg.