Regular Articles

Extreme ultraviolet lithography resist-based aberration metrology

[+] Author Affiliations
Germain L. Fenger

Rochester Institute of Technology, 168 Lomb Memorial Drive, Rochester, New York 14623

Lei Sun

GLOBALFOUNDRIES, 257 Fuller Road, Albany, New York 12203

Sudharshanan Raghunathan

GLOBALFOUNDRIES, 257 Fuller Road, Albany, New York 12203

Obert R. Wood

GLOBALFOUNDRIES, 257 Fuller Road, Albany, New York 12203

Bruce W. Smith

Rochester Institute of Technology, 168 Lomb Memorial Drive, Rochester, New York 14623

J. Micro/Nanolith. MEMS MOEMS. 12(4), 043001 (Oct 02, 2013). doi:10.1117/1.JMM.12.4.043001
History: Received June 13, 2013; Revised July 21, 2013; Accepted August 19, 2013
Text Size: A A A

Abstract.  Extreme ultraviolet lithography (EUVL) at 13.5 nm is currently the most promising technology for advanced integrated circuit manufacturing nodes. Since the wavelength for EUVL is an order of magnitude smaller than current optical lithography systems (193 nm), aberration tolerances on lens manufacturing must be tightened to avoid image distortion and contrast loss as they scale with wavelength. Therefore, understanding the aberrations of an EUVL system both in idle and production conditions is paramount. This study aims to assess a photoresist-based aberration metrology technique for capturing pupil information of EUVL systems that can be implemented during full system use. Several datasets have been collected on a full-field EUVL system. Various one-dimensional and two-dimensional binary structures were imaged and used for pupil wave front extraction in conjunction with computational modeling and simulations. Results show a successful extraction of a stable aberration signature over several measurements, showing the method to be sensitive to subnanometer levels of intentional aberration change through lens manipulation.

© 2013 Society of Photo-Optical Instrumentation Engineers

Citation

Germain L. Fenger ; Lei Sun ; Sudharshanan Raghunathan ; Obert R. Wood and Bruce W. Smith
"Extreme ultraviolet lithography resist-based aberration metrology", J. Micro/Nanolith. MEMS MOEMS. 12(4), 043001 (Oct 02, 2013). ; http://dx.doi.org/10.1117/1.JMM.12.4.043001


Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.