Special Section on Optical Lithography Extension Beyond the 14-nm Node

Impact of 14-nm photomask uncertainties on computational lithography solutions

[+] Author Affiliations
John Sturtevant

Mentor Graphics Corp., Wilsonville, Oregon 97070

Edita Tejnil

Mentor Graphics Corp., Wilsonville, Oregon 97070

Tim Lin

Mentor Graphics Corp., Wilsonville, Oregon 97070

Steffen Schulze

Mentor Graphics Corp., Wilsonville, Oregon 97070

Peter Buck, Franklin Kalk

Toppan Photomasks, Inc., Beaverton, Oregon 97006

Kent Nakagawa

Toppan Photomasks, Inc., Beaverton, Oregon 97006

Guoxiang Ning

GLOBALFOUNDRIES, Milpitas, California 95035

Paul Ackmann

GLOBALFOUNDRIES, Milpitas, California 95035

Fritz Gans

Advanced Mask Technology Center, 01074 Dresden, Germany

Christian Buergel

Advanced Mask Technology Center, 01074 Dresden, Germany

J. Micro/Nanolith. MEMS MOEMS. 13(1), 011004 (Dec 02, 2013). doi:10.1117/1.JMM.13.1.011004
History: Received June 21, 2013; Revised August 27, 2013; Accepted October 2, 2013
Text Size: A A A

Abstract.  Computational lithography solutions rely upon accurate process models to faithfully represent the imaging system output for a defined set of process and design inputs. These models rely upon the accurate representation of multiple parameters associated with the scanner and the photomask. Many input variables for simulation are based upon designed or recipe-requested values or independent measurements. It is known, however, that certain measurement methodologies, while precise, can have significant inaccuracies. Additionally, there are known errors associated with the representation of certain system parameters. With shrinking total critical dimension (CD) control budgets, appropriate accounting for all sources of error becomes more important, and the cumulative consequence of input errors to the computational lithography model can become significant. In this work, we examine via simulation the impact of errors in the representation of photomask properties including CD bias, corner rounding, refractive index, thickness, and sidewall angle. The factors that are most critical to be accurately represented in the model are cataloged. CD bias values are based on state-of-the-art mask manufacturing data, and other variable changes are speculated, highlighting the need for improved metrology and communication between mask and optical proxmity correction model experts. The simulations are done by ignoring the wafer photoresist model and show the sensitivity of predictions to various model inputs associated with the mask. It is shown that the wafer simulations are very dependent upon the one-dimensional/two-dimensional representation of the mask, and for three-dimensional, the mask sidewall angle is a very sensitive factor influencing simulated wafer CD results.

Figures in this Article
© 2014 Society of Photo-Optical Instrumentation Engineers

Citation

John Sturtevant ; Edita Tejnil ; Tim Lin ; Steffen Schulze ; Peter Buck, et al.
"Impact of 14-nm photomask uncertainties on computational lithography solutions", J. Micro/Nanolith. MEMS MOEMS. 13(1), 011004 (Dec 02, 2013). ; http://dx.doi.org/10.1117/1.JMM.13.1.011004


Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.