Special Section on Advanced Plasma-Etch Technology

Advanced plasma etch technologies for nanopatterning

[+] Author Affiliations
Rich Wise

IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533

J. Micro/Nanolith. MEMS MOEMS. 12(4), 041311 (Dec 27, 2013). doi:10.1117/1.JMM.12.4.041311
History: Received August 8, 2013; Revised November 12, 2013; Accepted December 6, 2013
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Abstract.  Advances in patterning techniques have enabled the extension of immersion lithography from 65/45nm through 14/10nm device technologies. A key to this increase in patterning capability has been innovation in the subsequent dry plasma etch processing steps. Multiple exposure techniques, such as litho-etch-litho-etch, sidewall image transfer, line/cut mask, and self-aligned structures, have been implemented to solution required device scaling. Advances in dry plasma etch process control across wafer uniformity and etch selectivity to both masking materials have enabled adoption of vertical devices and thin film scaling for increased device performance at a given pitch. Plasma etch processes, such as trilayer etches, aggressive critical dimension shrink techniques, and the extension of resist trim processes, have increased the attainable device dimensions at a given imaging capability. Precise control of the plasma etch parameters affecting across-design variation, defectivity, profile stability within wafer, within lot, and across tools has been successfully implemented to provide manufacturable patterning technology solutions. IBM has addressed these patterning challenges through an integrated total patterning solutions team to provide seamless and synergistic patterning processes to device and integration internal customers. We will discuss these challenges and the innovative plasma etch solutions pioneered by IBM and our alliance partners.

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© 2013 Society of Photo-Optical Instrumentation Engineers

Citation

Rich Wise
"Advanced plasma etch technologies for nanopatterning", J. Micro/Nanolith. MEMS MOEMS. 12(4), 041311 (Dec 27, 2013). ; http://dx.doi.org/10.1117/1.JMM.12.4.041311


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