Today three-dimensional (3-D) system-in-package integration together with advanced interconnect technologies based on through silicon vias (TSV), through encapsulant vias (TEV), and microbumps are considered some of the most promising enabling technologies for “More than Moore” solutions. In particular, 3-D integration can provide significant progress in semiconductor device development regarding increased system functionality, performance, and integration density. These technologies involve vertical die stacking or chip embedding with high-density interconnects and are based on combinations of process steps that come from formerly strictly separated technology areas. Thus, there is an increasing need to understand a large number of different interface properties between different interconnects and with any encapsulation or lamination materials, to control and optimize process steps and layer thicknesses, and to avoid any defect formation that potentially could affect the component’s reliability. This complexity in terms of design, new materials, and material combinations also requires the development of new system-adequate failure analysis tools capable of providing information on adhesion mechanisms, interdiffusion, and phase formation processes, or on electrical short, crack, and void formation issues.