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Structural improvement in resonant silicon sensors to sub-ppm/°C temperature coefficient of resonance frequency

[+] Author Affiliations
Zhanqiang Hou

National University of Defense Technology, College of Mechatronics and Automation, Changsha, Hunan 410073, China

Xuezhong Wu

National University of Defense Technology, College of Mechatronics and Automation, Changsha, Hunan 410073, China

Dingbang Xiao, Zhihua Chen, Jianbin Su

National University of Defense Technology, College of Mechatronics and Automation, Changsha, Hunan 410073, China

J. Micro/Nanolith. MEMS MOEMS. 13(1), 013016 (Mar 20, 2014). doi:10.1117/1.JMM.13.1.013016
History: Received November 6, 2013; Revised January 16, 2014; Accepted February 19, 2014
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Abstract.  This paper presents a structural improvement method for temperature coefficient of resonance frequency (TCF) in resonant silicon sensors. A silicon resonator, whose mass was suspended by a slanted flexible beam, was adopted in this study. The slanted suspension beam was formed by (1 0 0) and (1 1 1) crystal planes and fabricated by anisotropic wet etching. We propose a stress buffer structure to improve the robustness of resonance frequency against temperature variations. Theoretical considerations of the tested resonator are proposed to augment the effect of the buffer structure. The temperature dependence of the resonance frequency is experimentally characterized over the range 40°C to 60°C. The TCF of the original resonators with no stress buffer structure was linearly fitted to be 36 and 40ppm/°C. After using an appropriate stress buffer structure, the TCF is linearly fitted to be 0.98 and 0.36ppm/°C. The experimental results suggest that the TCF of the resonator is improved to sub-ppm/°C level by using a stress buffer structure, which has more than an order of magnitude improvement comparing to the original one. The small range of TCF is much more convenient to be compensated by electrical ways.

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© 2014 Society of Photo-Optical Instrumentation Engineers

Citation

Zhanqiang Hou ; Xuezhong Wu ; Dingbang Xiao ; Zhihua Chen and Jianbin Su
"Structural improvement in resonant silicon sensors to sub-ppm/°C temperature coefficient of resonance frequency", J. Micro/Nanolith. MEMS MOEMS. 13(1), 013016 (Mar 20, 2014). ; http://dx.doi.org/10.1117/1.JMM.13.1.013016


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