A programmed line type phase defect EUV blank (with no absorber) consists of a Ru-capped Mo/Si ML deposited on a quartz substrate with seeds on quartz for the creation of line type phase defects. The ML consisted of a 2.5-nm-thick Ru film on a 40-bilayer Mo (2.2 nm thick)/Si (4.8 nm thick) film. To serve as seeds for the phase defects, lines of 100 nm in width, arrayed in with a pitch of 22 mm, were fabricated on the quartz substrate. As a first step, a photoresist layer was coated on the chrome layer on a quartz substrate. Next, a set of line patterns were drawn on the photoresist layer by an electron beam writing system (EBM-8000, NuFlare Technology Inc., Yokohama, Japan). Then after developing the photoresist layer, the chrome layer was etched. As a last step, the quartz substrate was etched and the chrome layer was removed. After running through a cleaning process, the patterned substrate was then coated with a Ru-capped ML. The nonflatness of the blank before and after the ML coating was below 20 and 800 nm, respectively, and the ML surface was higher in the center of the EUV blank than in its corners.