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Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography

[+] Author Affiliations
Vikram Singh

Indian Institute of Technology Mandi, School of Computing and Electrical Engineering, Mandi, Himachal Pradesh 175001, India

Vardhineedi Sri Venkata Satyanarayana

Indian Institute of Technology Mandi, School of Basic Sciences, Mandi, Himachal Pradesh 175001, India

Nikola Batina

Depto. de Química, Lab. de Nanotecnología e Ingeniería Molecular, CBI, UAM-I, Mexico D.F., Mexico

Israel Morales Reyes

Depto. de Química, Lab. de Nanotecnología e Ingeniería Molecular, CBI, UAM-I, Mexico D.F., Mexico

Satinder K. Sharma

Indian Institute of Technology Mandi, School of Computing and Electrical Engineering, Mandi, Himachal Pradesh 175001, India

Felipe Kessler

Universidade Federal do Rio Grande do Sul, UFRGS, Instituto de Química, Avenida Bento Gonçalves 9500, P.O. Box 15003, 91501-970 Porto Alegre, RS, Brazil

Francine R. Scheffer

Universidade Federal do Rio Grande do Sul, UFRGS, Instituto de Química, Avenida Bento Gonçalves 9500, P.O. Box 15003, 91501-970 Porto Alegre, RS, Brazil

Daniel E. Weibel

Universidade Federal do Rio Grande do Sul, UFRGS, Instituto de Química, Avenida Bento Gonçalves 9500, P.O. Box 15003, 91501-970 Porto Alegre, RS, Brazil

Subrata Ghosh

Indian Institute of Technology Mandi, School of Basic Sciences, Mandi, Himachal Pradesh 175001, India

Kenneth E. Gonsalves

Indian Institute of Technology Mandi, School of Basic Sciences, Mandi, Himachal Pradesh 175001, India

J. Micro/Nanolith. MEMS MOEMS. 13(4), 043002 (Oct 16, 2014). doi:10.1117/1.JMM.13.4.043002
History: Received May 6, 2014; Revised August 27, 2014; Accepted September 4, 2014
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Abstract.  Although extreme ultraviolet (EUV) lithography is being considered as one of the most promising next-generation lithography techniques for patterning sub-20 nm features, the development of suitable EUV resists remains one of the main challenges confronting the semiconductor industry. The goal is to achieve sub-20 nm line patterns having low line edge roughness (LER) of <1.8nm and a sensitivity of 5 to 20mJ/cm2. The present work demonstrates the lithographic performance of two nonchemically amplified (n-CARs) negative photoresists, MAPDST homopolymer and MAPDST-MMA copolymer, prepared from suitable monomers containing the radiation sensitive sulfonium functionality. Investigations into the effect of several process parameters are reported. These include spinning conditions to obtain film thicknesses <50nm, baking regimes, exposure conditions, and the resulting surface topographies. The effect of these protocols on sensitivity, contrast, and resolution has been assessed for the optimization of 20 nm features and the corresponding LER/line width roughness. These n-CARs have also been found to possess high etch resistance. The etch durability of MAPDST homopolymer and MAPDST-MMA copolymer (under SF6 plasma chemistry) with respect to the silicon substrate are 7.21 and 8.31, respectively. This methodical investigation will provide guidance in designing new resist materials with improved efficiency for EUVL through polymer microstructure engineering.

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© 2014 Society of Photo-Optical Instrumentation Engineers

Citation

Vikram Singh ; Vardhineedi Sri Venkata Satyanarayana ; Nikola Batina ; Israel Morales Reyes ; Satinder K. Sharma, et al.
"Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography", J. Micro/Nanolith. MEMS MOEMS. 13(4), 043002 (Oct 16, 2014). ; http://dx.doi.org/10.1117/1.JMM.13.4.043002


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