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Defect mitigation considerations for EUV photomasks

[+] Author Affiliations
Anthony Garetto

Carl Zeiss SMS, Carl-Zeiss-Promenade 10, 07745 Jena, Germany

Renzo Capelli, Frederik Blumrich, Krister Magnusson, Markus Waiblinger, Thomas Scheruebl, Jan Hendrik Peters

Carl Zeiss SMS, Carl-Zeiss-Promenade 10, 07745 Jena, Germany

Michael Goldstein

Intel assignee at SEMATECH, 257 Fuller Road, 12203 Albany, New York, United States

J. Micro/Nanolith. MEMS MOEMS. 13(4), 043006 (Oct 27, 2014). doi:10.1117/1.JMM.13.4.043006
History: Received April 29, 2014; Revised October 1, 2014; Accepted October 2, 2014
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Abstract.  The introduction of extreme ultraviolet (EUV) lithography into manufacturing requires changes in all aspects of the infrastructure, including the photomask. EUV reflective masks consist of a sophisticated multilayer (ML) mirror, capping layer, absorber layer, and anti-reflective coating thereby dramatically increasing the complexity of the photomask. In addition to absorber type defects similar to those the industry was forced to contend with for deep ultraviolet lithography, the complexity of the mask leads to new classes of ML defects. Furthermore, these approaches are complicated not only by the mask itself but also by unique aspects associated with the exposure of the photomask by the EUV scanner. This paper focuses on the challenges for handling defects associated with inspection, review, and repair for EUV photomasks. Blank inspection and pattern shifting, two completely new steps within the mask manufacturing process that arise from these considerations, and their relationship to mask review and repair are discussed. The impact of shadowing effects on absorber defect repair height is taken into account. The effect of mask biasing and the chief ray angle rotation due to the scanner slit arc shape will be discussed along with the implications of obtaining die-to-die references for inspection and repair. The success criteria for compensational repair of ML defects will be reviewed.

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© 2014 Society of Photo-Optical Instrumentation Engineers

Citation

Anthony Garetto ; Renzo Capelli ; Frederik Blumrich ; Krister Magnusson ; Markus Waiblinger, et al.
"Defect mitigation considerations for EUV photomasks", J. Micro/Nanolith. MEMS MOEMS. 13(4), 043006 (Oct 27, 2014). ; http://dx.doi.org/10.1117/1.JMM.13.4.043006


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