The lithography and etching processes for fabricating OFSS-SLPFG are shown in Fig. 3. First, copper is deposited via sputtering on the surface of the wafer [4 in. (100)] as a sacrificial layer for the wet-etching release of SLPFG. Second, the SU-8 10 photoresist is spin coated on the wafer to create a -thick OFSS-SLPFG base layer used as the surface bonding layer to prevent the glue effect. Third, the -thick negative photoresist SU-8 3050 is spun on the base layer, and the supporting structure is developed via lithography as the second layer for the bottom grating pattern. After forming the supporting structures, the etched optical fiber with a diameter is precisely fixed to the supporting structure. Then, the photoresist SU-8 3050 is spun again to cover the optical fiber and form the third layer. The fiber, which is embedded in a patterned SU8 3050 photoresist, is attained by means of this process. Fourth, the sacrificial copper thin film is removed with a solution of 45% ferric chloride, completing the OFSS-SLPFG.