Special Section on Continuation of Scaling with Optical and Complementary Lithography

Triple patterning lithography layout decomposition using end-cutting

[+] Author Affiliations
Bei Yu

University of Texas at Austin, ECE Department, Austin, Texas 78712, United States

Subhendu Roy

University of Texas at Austin, ECE Department, Austin, Texas 78712, United States

Jhih-Rong Gao

Cadence Design Systems, 12515-7 Research Boulevard, Austin, Texas 78759, United States

David Z. Pan

University of Texas at Austin, ECE Department, Austin, Texas 78712, United States

J. Micro/Nanolith. MEMS MOEMS. 14(1), 011002 (Nov 04, 2014). doi:10.1117/1.JMM.14.1.011002
History: Received May 8, 2014; Revised July 2, 2014; Accepted July 17, 2014
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Abstract.  Triple patterning lithography (TPL) is one of the most promising techniques in the 14-nm logic node and beyond. Conventional LELELE type TPL technology suffers from native conflict and overlapping problems. Recently, as an alternative process, TPL with end-cutting (LELE-EC) was proposed to overcome the limitations of LELELE manufacturing. In the LELE-EC process, the first two masks are LELE type double patterning, while the third mask is used to generate the end-cuts. Although the layout decomposition problem for LELELE has been well studied in the literature, only a few attempts have been made to address the LELE-EC layout decomposition problem. We propose a comprehensive study for LELE-EC layout decomposition. Layout graph and end-cut graph are constructed to extract all the geometrical relationships of both input layout and end-cut candidates. Based on these graphs, integer linear programming is formulated to minimize the conflict and the stitch numbers. The experimental results demonstrate the effectiveness of the proposed algorithms.

© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Bei Yu ; Subhendu Roy ; Jhih-Rong Gao and David Z. Pan
"Triple patterning lithography layout decomposition using end-cutting", J. Micro/Nanolith. MEMS MOEMS. 14(1), 011002 (Nov 04, 2014). ; http://dx.doi.org/10.1117/1.JMM.14.1.011002


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