Special Section on Holistic/Hybrid Metrology

Assessment of critical dimension small-angle x-ray scattering measurement approaches for FinFET fabrication process monitoring

[+] Author Affiliations
Charles Settens

State University of New York College of Nanoscale Science and Engineering, Albany, New York 12203, United States

Sematech, Albany, New York 12203, United States

Aaron Cordes

Sematech, Albany, New York 12203, United States

Benjamin Bunday

Sematech, Albany, New York 12203, United States

Abner Bello

GlobalFoundries, Technology Development, Malta, New York 12020, United States

Vimal Kamineni

GlobalFoundries, Technology Research, Albany, New York 12203, United States

Abhijeet Paul

GlobalFoundries, Technology Research, Albany, New York 12203, United States

Jody Fronheiser

GlobalFoundries, Technology Research, Albany, New York 12203, United States

Richard Matyi

State University of New York College of Nanoscale Science and Engineering, Albany, New York 12203, United States

J. Micro/Nanolith. MEMS MOEMS. 13(4), 041408 (Nov 04, 2014). doi:10.1117/1.JMM.13.4.041408
History: Received July 2, 2014; Revised September 4, 2014; Accepted September 19, 2014
Text Size: A A A

Abstract.  We have used synchrotron-based critical dimension small-angle x-ray scattering (CD-SAXS) to monitor the impact of hydrogen annealing on the structural characteristics of silicon FinFET structures fabricated using self-aligned double patterning on both bulk silicon and silicon-on-insulator (SOI) substrates. H2 annealing under different conditions of temperature and gas pressure allowed us to vary the sidewall roughness and observe the response in the two metrology approaches. In the case of the simpler bulk Si FinFET structures, the CD-SAXS measurements of the critical dimensions are in substantive agreement with the top–down critical dimension scanning electron microscopy metrology. Corresponding characterizations on SOI-based FinFET structures showed less agreement, which is attributed to the more complex structural model required for SOI FinFET CD-SAXS modeling. Because sidewall roughness is an important factor in the performance characteristics of Si FinFETs, we have compared the results of roughness measurements using both critical dimension atomic force microscopy (CD-AFM) and CD-SAXS. The measurements yield similar estimates of sidewall roughness, although the CD-AFM values were typically larger than those generated by CD-SAXS. The reasons for these differences will be discussed.

Figures in this Article
© 2014 Society of Photo-Optical Instrumentation Engineers

Citation

Charles Settens ; Aaron Cordes ; Benjamin Bunday ; Abner Bello ; Vimal Kamineni, et al.
"Assessment of critical dimension small-angle x-ray scattering measurement approaches for FinFET fabrication process monitoring", J. Micro/Nanolith. MEMS MOEMS. 13(4), 041408 (Nov 04, 2014). ; http://dx.doi.org/10.1117/1.JMM.13.4.041408


Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

PubMed Articles
Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Article
Sign in or Create a personal account to Buy this article ($20 for members, $25 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.