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Resist toploss and profile modeling for optical proximity correction applications

[+] Author Affiliations
Christian Zuniga

Mentor Graphics Corporation, 46871 Bayside Parkway, Fremont, California 94538, United States

Yunfei Deng

Mentor Graphics Corporation, 46871 Bayside Parkway, Fremont, California 94538, United States

J. Micro/Nanolith. MEMS MOEMS. 13(4), 043010 (Nov 06, 2014). doi:10.1117/1.JMM.13.4.043010
History: Received April 11, 2014; Revised August 6, 2014; Accepted October 9, 2014
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Abstract.  As critical dimensions decrease for 32-nm node and beyond, the resist loss increases and resist patterns become more vulnerable to etching failures. Traditional optical proximity correction (OPC) models only consider two-dimensional (XY) contours and neglect height (Z) variations. Rigorous resist simulators can simulate a three-dimensional (3-D) resist profile, but they are not fast enough for correction or verification on a full chip. However, resist loss for positive-tone resists is mainly driven by optical intensity variations, which are accurately modeled by the optical portion of an OPC model. We show that a compact resist model can be used to determine resist loss by properly selecting the optical image plane for calibration. The model can then be used to identify toploss hotspots on a full chip and, in some cases, for correction of these patterns. In addition, the article will show how the model can be made more accurate by accounting for some 3-D effects like diffusion through height.

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© 2014 Society of Photo-Optical Instrumentation Engineers

Citation

Christian Zuniga and Yunfei Deng
"Resist toploss and profile modeling for optical proximity correction applications", J. Micro/Nanolith. MEMS MOEMS. 13(4), 043010 (Nov 06, 2014). ; http://dx.doi.org/10.1117/1.JMM.13.4.043010


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