Resist toploss and profile modeling for optical proximity correction applications

Christian D. Zuniga; Yunfei Deng

doi:10.1117/1.JMM.13.4.043010

6 November 2014 Resist toploss and profile modeling for optical proximity correction applications

Christian D. Zuniga, Yunfei Deng

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 13, Issue 4, 043010 (November 2014). https://doi.org/10.1117/1.JMM.13.4.043010

Abstract

As critical dimensions decrease for 32-nm node and beyond, the resist loss increases and resist patterns become more vulnerable to etching failures. Traditional optical proximity correction (OPC) models only consider two-dimensional (XY) contours and neglect height (Z) variations. Rigorous resist simulators can simulate a three-dimensional (3-D) resist profile, but they are not fast enough for correction or verification on a full chip. However, resist loss for positive-tone resists is mainly driven by optical intensity variations, which are accurately modeled by the optical portion of an OPC model. We show that a compact resist model can be used to determine resist loss by properly selecting the optical image plane for calibration. The model can then be used to identify toploss hotspots on a full chip and, in some cases, for correction of these patterns. In addition, the article will show how the model can be made more accurate by accounting for some 3-D effects like diffusion through height.

Citation Download Citation

Christian D. Zuniga and Yunfei Deng "Resist toploss and profile modeling for optical proximity correction applications," Journal of Micro/Nanolithography, MEMS, and MOEMS 13(4), 043010 (6 November 2014). https://doi.org/10.1117/1.JMM.13.4.043010

Published: 6 November 2014

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