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PostCMOS compatible sacrificial layers for aluminum nitride microcantilevers

[+] Author Affiliations
Ana Pérez-Campos

Technical University of Madrid, ISOM and Electronic Engineering Department, Ciudad Universitaria, Madrid 28040, Spain

Gonzalo Fuentes Iriarte

Technical University of Madrid, ISOM and Electronic Engineering Department, Ciudad Universitaria, Madrid 28040, Spain

Vadim Lebedev

Fraunhofer Institute for Applied Solid State Physics, Tullastraße 72, Freiburg 79108, Germany

Fernando Calle

Technical University of Madrid, ISOM and Electronic Engineering Department, Ciudad Universitaria, Madrid 28040, Spain

J. Micro/Nanolith. MEMS MOEMS. 13(4), 043012 (Nov 20, 2014). doi:10.1117/1.JMM.13.4.043012
History: Received June 2, 2014; Accepted October 23, 2014
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Abstract.  This report shows different fabrication procedures followed to obtain piezoelectric microcantilevers. The proposed microcantilever is a sandwich structure composed of chromium (Cr) electrodes (from 50 to 300-nm thick) and a reactive sputtered piezoelectric aluminum nitride (AlN) thin film (from 350 nm to 600-nm thick). The microcantilevers top-view dimensions ranged from 50 to 300μm in width and from to 250 to 700μm in length. Several materials such as nickel silicide and nickel, as well as a photoresist, and finally the silicon substrate surface have been investigated to discern their possibilities and limitations when used as sacrificial layers. These materials have been studied to determine the optimal processing steps and chemistries required for each of them. The easiest and the only successful microcantilevers release was finally obtained using the top silicon substrate surface as a sacrificial layer. The structural and morphological characteristics of the microcantilevers are presented as well as their piezoelectric character. The main difference of this work resides in the Si surface-based microcantilever release technique. This, along with the synthesis of AlN at room temperature by reactive sputtering, establishes a manufacturing procedure for piezoelectric microbeams, which makes possible the integration of such MEMS devices into postCMOS technology.

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© 2014 Society of Photo-Optical Instrumentation Engineers

Citation

Ana Pérez-Campos ; Gonzalo Fuentes Iriarte ; Vadim Lebedev and Fernando Calle
"PostCMOS compatible sacrificial layers for aluminum nitride microcantilevers", J. Micro/Nanolith. MEMS MOEMS. 13(4), 043012 (Nov 20, 2014). ; http://dx.doi.org/10.1117/1.JMM.13.4.043012


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