Fabrication of self-aligned, nanoscale, complex oxide varactors

Richard X. Fu; Ryan C. Toonen; Samuel G. Hirsch; Mathew P. Ivill; Melanie W. Cole; Kenneth E. Strawhecker

doi:10.1117/1.JMM.14.1.013508

3 March 2015 Fabrication of self-aligned, nanoscale, complex oxide varactors

Richard X. Fu, Ryan C. Toonen, Samuel G. Hirsch, Mathew P. Ivill, Melanie W. Cole, Kenneth E. Strawhecker

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 14, Issue 1, 013508 (March 2015). https://doi.org/10.1117/1.JMM.14.1.013508

Abstract

Applications in ferroelectric random access memory and superparaelectric devices require the fabrication of ferroelectric capacitors at the nanoscale that exhibit extremely small leakage currents. To systematically study the material-size dependence of ferroelectric varactor performance, arrays of parallel-plate structures have been fabricated with nanoscale dielectric diameters. Electron beam lithography and inductively coupled plasma dry etching have been used to fabricate arrays of ferroelectric varactors using top electrodes as a self-aligned etch mask. Parallel-plate test structures using RF-sputtered Ba_0.6Sr_0.4TiO₃ thin-films were used to optimize the fabrication process. Varactors with diameters down to 20 nm were successfully fabricated. Current-voltage (I-V) characteristics were measured to evaluate the significance of etch-damage and fabrication quality by ensuring low leakage currents through the structures.

Citation Download Citation

Richard X. Fu, Ryan C. Toonen, Samuel G. Hirsch, Mathew P. Ivill, Melanie W. Cole, and Kenneth E. Strawhecker "Fabrication of self-aligned, nanoscale, complex oxide varactors," Journal of Micro/Nanolithography, MEMS, and MOEMS 14(1), 013508 (3 March 2015). https://doi.org/10.1117/1.JMM.14.1.013508

Published: 3 March 2015

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