MMSE-based scatterometry has the capability of measuring important feature dimensions of unetched polymer samples and is able to differentiate between perfectly oriented and completely disoriented PS--PMMA patterns, but sensitivity to partially ordered PS--PMMA patterns is not observed for the unetched samples. These results have been demonstrated here with 28 nm pitch PS--PMMA. Scatterometry is more effective in characterizing the line-space patterns where part of the polymer has been selectively removed and is also effective for Si fins. This is determined by comparing scatterometry wafer maps for unetched samples, etched samples, and CD-SEM wafer map. Sensitivity to structural parameters, such as line-width, line-shape, and even the underlying guide pitch, is observed for etched samples. Samples with different guide pattern pitches are all distinguished for fully aligned line patterns and, additionally, the amount of disorder in the patterns is measured. Anisotropy coefficients calculated from experimental MMSE data suggest that the PS line-space patterns are circularly anisotropic (, , ). Incorporating anisotropic optical properties in scatterometry models is challenging, but possible, and will be the subject of future investigation. The spectral comparison based on optical anisotropy and depolarization was found to be sensitive to DSA pattern defectivity and is easy-to-use. Changes in the circular anisotropy coefficient () and depolarization coefficient () with increasing disorientation are used to characterize the degree of disorder in the PS line-space patterns. Slight imperfections in the PS line-space patterns are detected by changes in depolarization values. Profile details of the Si fins can be measured, and sensitivity to the nonidealities present in the fin samples, such as low-frequency roughness and uneven depth, is observed.