Lithography

Evaluating printability of buried native extreme ultraviolet mask phase defects through a modeling and simulation approach

[+] Author Affiliations
Mihir Upadhyaya, Adarsh Basavalingappa, Henry Herbol, Gregory Denbeaux

State University of New York, College of Nanoscale Science and Engineering, 255 Fuller Road, Albany, New York 12203, United States

Vibhu Jindal

SEMATECH, 257 Fuller Road, Albany, New York 12203, United States

Jenah Harris-Jones

Global Foundries, 400 Stone Break Extension, Malta, New York 12020, United States

Il-Yong Jang

Samsung Electronics Co., 129 Samsung-ro Suwon-Si, Gyeonggi-Do 443-742, Republic of Korea

Kenneth A. Goldberg, Iacopo Mochi

Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, California 94720, United States

Sajan Marokkey, Wolfgang Demmerle

Synopsys, 700 East Middlefield Road, Mountain View, California 94043, United States

Thomas V. Pistor

Panoramic Technology Inc., 1221 Balboa Avenue, Burlingame, California 94010, United States

J. Micro/Nanolith. MEMS MOEMS. 14(2), 023505 (May 15, 2015). doi:10.1117/1.JMM.14.2.023505
History: Received February 9, 2015; Accepted April 13, 2015
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Abstract.  Since completely defect-free masks will be hard to achieve, it is essential to have a good understanding of the printability of the native extreme ultraviolet (EUV) mask defects. In this work, we performed a systematic study of native mask defects to understand the defect printability they cause. The multilayer growth over native substrate mask blank defects was correlated to the multilayer growth over regular-shaped defects having similar profiles in terms of their width and height. To model the multilayer growth over the defects, a multilayer growth model based on a level-set technique was used that took into account the tool deposition conditions of the Veeco Nexus ion beam deposition tool. Further, the printability of the characterized native defects was studied at the SEMATECH-Berkeley Actinic Inspection Tool (AIT), an EUV mask-imaging microscope at Lawrence Berkeley National Laboratory. Printability of the modeled regular-shaped defects, which were propagated up the multilayer stack using level-set growth model, was studied using defect printability simulations implementing the waveguide algorithm. Good comparison was observed between AIT and the simulation results, thus demonstrating that multilayer growth over a defect is primarily a function of a defect’s width and height, irrespective of its shape.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Mihir Upadhyaya ; Vibhu Jindal ; Adarsh Basavalingappa ; Henry Herbol ; Jenah Harris-Jones, et al.
"Evaluating printability of buried native extreme ultraviolet mask phase defects through a modeling and simulation approach", J. Micro/Nanolith. MEMS MOEMS. 14(2), 023505 (May 15, 2015). ; http://dx.doi.org/10.1117/1.JMM.14.2.023505


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