Lithography

Line edge roughness frequency analysis during pattern transfer in semiconductor fabrication

[+] Author Affiliations
Lei Sun, Wenhui Wang, Genevieve Beique, Min Gyu Sung, Obert R. Wood, II, Ryoung-Han Kim

GLOBALFOUNDRIES, 257 Fuller Road, Suite 3100, Albany, New York 12203, United States

J. Micro/Nanolith. MEMS MOEMS. 14(3), 033501 (Jul 13, 2015). doi:10.1117/1.JMM.14.3.033501
History: Received May 4, 2015; Accepted June 12, 2015
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Abstract.  Line edge roughness (LER) and line width roughness (LWR) are analyzed based on the frequency domain 3σ LER characterization methodology during pattern transfer in a self-aligned double patterning (SADP) process. The power spectrum of the LER/LWR is divided into three regions: low frequency, middle frequency, and high frequency regions. Three standard deviation numbers are used to characterize the LER/LWR in the three frequency regions. Pattern wiggling is also detected quantitatively during LER/LWR transfer in the SADP process.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Lei Sun ; Wenhui Wang ; Genevieve Beique ; Min Gyu Sung ; Obert R. Wood, II, et al.
"Line edge roughness frequency analysis during pattern transfer in semiconductor fabrication", J. Micro/Nanolith. MEMS MOEMS. 14(3), 033501 (Jul 13, 2015). ; http://dx.doi.org/10.1117/1.JMM.14.3.033501


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