Special Section on Alternative Lithographic Technologies IV

Pattern transfer into silicon using sub-10 nm masks made by electron beam-induced deposition

[+] Author Affiliations
Marijke Scotuzzi, Martin J. Kamerbeek, Cornelis W. Hagen

Delft University of Technology, Department of Imaging Physics, Charged Particle Optics Group, Lorentzweg 1, 2628 CJ, Delft, The Netherlands

Andy Goodyear, Mike Cooke

Oxford Instruments Plasma Technology, North End, Yatton, Bristol BS49 4AP, United Kingdom

J. Micro/Nanolith. MEMS MOEMS. 14(3), 031206 (Jul 15, 2015). doi:10.1117/1.JMM.14.3.031206
History: Received April 15, 2015; Accepted June 16, 2015
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Abstract.  To demonstrate the possibility of using electron beam-induced deposition (EBID) masks for sub-10 nm pattern transfer into silicon, first experiments were carried out by using 20- to 40-nm EBID masks, which were etched by different chemistries. It is experimentally verified that recipes based on hydrogen bromide, chlorine, and boron trichloride can selectively etch silicon when using 20- to 40-nm masks made by EBID. We observed an enhancement of the height ratio, i.e., the ratio of the height of structures before and after etching, up to a factor of 3.5 when using chlorine chemistry. To demonstrate the pattern transfer of sub-10 nm structures, further experiments were carried out using 8- to 20-nm EBID masks in combination with hydrogen bromide, chlorine, and fluorine chemistries. Fluorine chemistry provided the best results in terms of surface smoothness and height ratio. In this case, 7.4-nm lines were successfully transferred into silicon, resulting in 14.3-nm-wide lines with a height ratio of 5.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Marijke Scotuzzi ; Martin J. Kamerbeek ; Andy Goodyear ; Mike Cooke and Cornelis W. Hagen
"Pattern transfer into silicon using sub-10 nm masks made by electron beam-induced deposition", J. Micro/Nanolith. MEMS MOEMS. 14(3), 031206 (Jul 15, 2015). ; http://dx.doi.org/10.1117/1.JMM.14.3.031206


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