Lithography

Molecular dynamics simulation on selective etching of α-quartz and amorphous quartz substrate using low-energy argon ion bombardment model in dry etching process

[+] Author Affiliations
Abdul Haadi Abdul Manap, Khairudin Mohamed

Universiti Sains Malaysia, Nanofabrication and Functional Materials Research Group, School of Mechanical Engineering, Engineering Campus, Nibong Tebal, Penang 14300, Malaysia

J. Micro/Nanolith. MEMS MOEMS. 14(3), 033505 (Jul 21, 2015). doi:10.1117/1.JMM.14.3.033505
History: Received February 26, 2015; Accepted June 10, 2015
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Abstract.  We investigated the physical sputtering of low-energy argon bombardment onto α-quartz and amorphous quartz substrate using dynamics simulations. We reported the effects of etching selectivity, the effect of surface temperature, Ts, and the effect of incident energy, Ei on sputtering yield. The second generation charge-optimized many body (COMB10) potential was utilized to model the interatomic potential of quartz substrates. Simulations were conducted at incident energies of Ei=50, 100, and 150 eV and substrate temperatures of Ts=300, 500, and 800 K. α-quartz shows higher sputtering yield compared to amorphous quartz at any given incident energy, Ei and substrate temperature, Ts. α-quartz has also produced more stoichiometric yield compared to amorphous quartz.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Abdul Haadi Abdul Manap and Khairudin Mohamed
"Molecular dynamics simulation on selective etching of α-quartz and amorphous quartz substrate using low-energy argon ion bombardment model in dry etching process", J. Micro/Nanolith. MEMS MOEMS. 14(3), 033505 (Jul 21, 2015). ; http://dx.doi.org/10.1117/1.JMM.14.3.033505


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