Special Section on Alternative Lithographic Technologies IV

Fabrication of functional electromechanical nanowire resonators by focused ion beam implantation

[+] Author Affiliations
Jordi Llobet, Marta Gerbolés, Marc Sansa, Joan Bausells, Francesc Perez-Murano

Institut de Microelectrònica de Barcelona (IMB-CNM CSIC), Nano NEMS Group, Campus UAB, Bellaterra, Catalonia 08193, Spain

Xavier Borrisé

Institut Català de Nanociència i Nanotecnologia (ICN2), Campus UAB, Bellaterra, Catalonia 08193, Spain

J. Micro/Nanolith. MEMS MOEMS. 14(3), 031207 (Jul 27, 2015). doi:10.1117/1.JMM.14.3.031207
History: Received March 23, 2015; Accepted June 24, 2015
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Abstract.  A fast and flexible fabrication method that allows the creation of silicon structures of various geometries is presented. It is based on the combination of focused ion beam local gallium implantation, selective silicon etching, and diffusive boron doping. The structures obtained by this resistless method are electrically conductive. Freely suspended mechanical resonators of different dimensions and geometries have been fabricated and measured. The resulting devices present a good electrical conductivity which allows the characterization of their high-frequency mechanical response by electrical read-out.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Jordi Llobet ; Marta Gerbolés ; Marc Sansa ; Joan Bausells ; Xavier Borrisé, et al.
"Fabrication of functional electromechanical nanowire resonators by focused ion beam implantation", J. Micro/Nanolith. MEMS MOEMS. 14(3), 031207 (Jul 27, 2015). ; http://dx.doi.org/10.1117/1.JMM.14.3.031207


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