Microelectromechanical Systems (MEMS)

Study on electrical parameter to nano thin-film transistor under GPa-order stress

[+] Author Affiliations
Tieying Ma

China Jiliang University, College of Optical and Electronic Technology, Hangzhou 310013, China

Zhejiang University, Micro-satellite Research Center, Hangzhou 310027, China

Sen Yang

China Jiliang University, College of Optical and Electronic Technology, Hangzhou 310013, China

Yidong Liu, Huiquan Wang

Zhejiang University, Micro-satellite Research Center, Hangzhou 310027, China

J. Micro/Nanolith. MEMS MOEMS. 14(3), 035001 (Aug 07, 2015). doi:10.1117/1.JMM.14.3.035001
History: Received February 26, 2015; Accepted July 7, 2015
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Abstract.  Nano thinfilm transistor (TFT) is fabricated at the root of a beam, which becomes the maximum stress area when the beam is bent. In this process, a probe is used to bend the beam and produce GPa-order mechanical stress. The electrical characteristic of TFT under different GPa stress has been studied. Threshold voltage VT, relative drain current change ΔIds/Ids, and transconductance gm present a nonlinear relationship with increasing GPa-order stress. Analyzed from experimental results, channel piezoresistivity effect below 1.82 GPa stress, energy valley splitting, large change of valence effective mass from 1.82 to 2.08 GPa, and interface effect above 2.08 GPa are the factors of nonlinear change of parameter with GPa-order mechanical stress.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Tieying Ma ; Sen Yang ; Yidong Liu and Huiquan Wang
"Study on electrical parameter to nano thin-film transistor under GPa-order stress", J. Micro/Nanolith. MEMS MOEMS. 14(3), 035001 (Aug 07, 2015). ; http://dx.doi.org/10.1117/1.JMM.14.3.035001


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