Lithography

Extreme ultraviolet lithography patterned mask defect detection performance evaluation toward 16- to 11-nm half-pitch generation

[+] Author Affiliations
Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Hidehiro Watanabe

EUVL Infrastructure Development Center, Inc., 16-1 Onogawa, Tsukuba-shi, Ibaraki-ken 305-8569, Japan

Masahiro Hatakeyama, Takeshi Murakami, Shoji Yoshikawa, Kenji Terao

EBARA Corporation, 4-2-1, Honfujisawa, Fujisawa-shi 251-8502, Japan

J. Micro/Nanolith. MEMS MOEMS. 14(3), 033512 (Sep 21, 2015). doi:10.1117/1.JMM.14.3.033512
History: Received June 13, 2015; Accepted August 21, 2015
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Abstract.  High-sensitivity and low-noise extreme ultraviolet (EUV) mask pattern defect detection is one of the major issues remaining to be addressed in device fabrication using extreme ultraviolet lithography (EUVL). We have designed a projection electron microscopy (PEM) system, which has proven to be quite promising for half-pitch (hp) 16-nm node to hp 11-nm node mask inspection. The PEM system was integrated into a pattern inspection system for defect detection sensitivity evaluation. To improve the performance of hp 16-nm patterned mask defect detection toward hp 11-nm EUVL patterned mask, defect detection signal characteristics, which depend on hp 64-nm pattern image intensity deviation on EUVL mask, were studied. Image adjustment effect of the captured images for die-to-die defect detection was evaluated before the start of the defect detection image-processing sequence. Image correction of intrafield intensity unevenness and L/S pattern image contrast deviation suppresses the generation of false defects. Captured images of extrusion and intrusion defects in hp 64-nm L/S patterns were used for detection. Applying the image correction for defect detection, 12-nm sized intrusion defect, which was smaller than our target size for hp 16-nm defect detection requirements, was identified without false defects.

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© 2015 Society of Photo-Optical Instrumentation Engineers

Citation

Ryoichi Hirano ; Susumu Iida ; Tsuyoshi Amano ; Hidehiro Watanabe ; Masahiro Hatakeyama, et al.
"Extreme ultraviolet lithography patterned mask defect detection performance evaluation toward 16- to 11-nm half-pitch generation", J. Micro/Nanolith. MEMS MOEMS. 14(3), 033512 (Sep 21, 2015). ; http://dx.doi.org/10.1117/1.JMM.14.3.033512


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