Special Section on Photomask Manufacturing Technology

Printability of buried extreme ultraviolet lithography photomask defects

[+] Author Affiliations
Kazunori Seki, Takeshi Isogawa, Masayuki Kagawa, Shinji Akima

Toppan Photomasks Inc., 1000 River Street, Essex Junction, Vermont 05452, United States

Yutaka Kodera

Toppan Printing Co., Ltd., 21-33 Nobidome 7-Chome, Niiza-shi, Saitama 352-8562, Japan

Karen Badger, Mark Lawliss, Jed Rankin

GlobalFoundries Inc., 1000 River Street, Essex Junction, Vermont 05452, United States

Zhengqing John Qi

GlobalFoundries Inc., 257 Fuller Road, Albany Nanotech, Albany, New York 12203, United States

Ravi Bonam

IBM Research, 257 Fuller Road, Albany Nanotech, Albany, New York 12203, United States

J. Micro/Nanolith. MEMS MOEMS. 15(2), 021004 (Feb 01, 2016). doi:10.1117/1.JMM.15.2.021004
History: Received October 27, 2015; Accepted January 5, 2016
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Abstract.  Native acting phase-programmed defects, otherwise known as buried program defects, with attributes very similar to native defects, were successfully fabricated using a high-accuracy overlay technique. The defect detectability and visibility were analyzed with conventional amplitude and phase-contrast blank inspection at 193-nm wavelength, pattern inspection at 193-nm wavelength, and scanning electron microscopy. The mask was also printed on wafer, and printability is discussed. Finally, the inspection sensitivity and wafer printability are compared, leading to the observation that the current blank- and pattern-inspection sensitivity is not enough to detect all of the printable defects.

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© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Kazunori Seki ; Takeshi Isogawa ; Masayuki Kagawa ; Shinji Akima ; Yutaka Kodera, et al.
"Printability of buried extreme ultraviolet lithography photomask defects", J. Micro/Nanolith. MEMS MOEMS. 15(2), 021004 (Feb 01, 2016). ; http://dx.doi.org/10.1117/1.JMM.15.2.021004


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