Special Section on Photomask Manufacturing Technology

Viability of pattern shift for defect-free extreme ultraviolet lithography photomasks

[+] Author Affiliations
Zhengqing John Qi

GLOBALFOUNDRIES Inc., 275 Fuller Road, Albany, New York 12203, United States

Jed Rankin

GLOBALFOUNDRIES Inc., 1000 River Street, Essex Junction, Vermont 05452, United States

Eisuke Narita, Masayuki Kagawa

Toppan Photomask Inc., 1000 River Street, Essex Junction, Vermont 05452, United States

J. Micro/Nanolith. MEMS MOEMS. 15(2), 021005 (Feb 02, 2016). doi:10.1117/1.JMM.15.2.021005
History: Received October 13, 2015; Accepted December 23, 2015
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Abstract.  Several challenges hinder extreme ultraviolet lithography (EUVL) photomask fabrication and its readiness for high-volume manufacturing (HVM). The lack in availability of pristine defect-free blanks as well as the absence of a robust mask repair technique mandates defect mitigation through pattern shift for the production of defect-free photomasks. By using known defect locations on a blank, the mask design can be intentionally shifted to avoid patterning directly over a defect. The work presented here provides a comprehensive look at pattern shift implementation to intersect EUV HVM for the 7-nm technology node (N7). An empirical error budget to compensate for various measurement errors, based on the latest HVM inspection and write tool capabilities, is first established and then verified postpatterning. The validated error budget is applied to 20 representative EUV blanks and pattern shift is performed using fully functional N7 chip designs that were recently used to fabricate working silicon–germanium devices. Probability of defect-free masks are explored for various N7 photomask levels, including metal, contact, and gate cut layers. From these results, an assessment is made on the current viability of defect-free EUV masks and what is required to construct a complete defect-free EUV mask set.

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© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Zhengqing John Qi ; Jed Rankin ; Eisuke Narita and Masayuki Kagawa
"Viability of pattern shift for defect-free extreme ultraviolet lithography photomasks", J. Micro/Nanolith. MEMS MOEMS. 15(2), 021005 (Feb 02, 2016). ; http://dx.doi.org/10.1117/1.JMM.15.2.021005


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