Special Section on Extending VLSI and Alternative Technology with Optical and Complementary Lithography

Accurate, full-chip, three-dimensional electromagnetic field model for non-Manhattan mask corners

[+] Author Affiliations
Michael C. Lam, Chris Clifford, Mike Oliver, Edita Tejnil, Kostas Adam

Mentor Graphics Corp., 46871 Bayside Parkway, Fremont, California 94538, United States

David Fryer

Mentor Graphics Corp., 8005 Boeckman Road, Wilsonville, Oregon 97070, United States

J. Micro/Nanolith. MEMS MOEMS. 15(2), 021204 (Feb 16, 2016). doi:10.1117/1.JMM.15.2.021204
History: Received November 4, 2015; Accepted January 18, 2016
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Abstract.  The physical process of mask manufacturing produces absorber geometry with significant deviations from the 90-deg corners, which are typically assumed in the mask design. The non-Manhattan mask geometry is an essential contributor to the aerial image and resulting patterning performance through focus. Current state-of-the-art models for corner rounding employ “chopping” a 90-deg mask corner, replacing the corner with a small 45-deg edge. A methodology is presented to approximate the impact of three-dimensional (3-D) EMF effects introduced by corners with rounded edges. The approach is integrated into a full-chip 3-D mask simulation methodology based on the domain decomposition method with edge to edge crosstalk correction.

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© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Michael C. Lam ; Chris Clifford ; Mike Oliver ; David Fryer ; Edita Tejnil, et al.
"Accurate, full-chip, three-dimensional electromagnetic field model for non-Manhattan mask corners", J. Micro/Nanolith. MEMS MOEMS. 15(2), 021204 (Feb 16, 2016). ; http://dx.doi.org/10.1117/1.JMM.15.2.021204


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