Special Section on Extending VLSI and Alternative Technology with Optical and Complementary Lithography

Mask-induced best-focus shifts in deep ultraviolet and extreme ultraviolet lithography

[+] Author Affiliations
Andreas Erdmann, Peter Evanschitzky

Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, Erlangen 91058, Germany

Jens Timo Neumann, Paul Gräupner

Carl Zeiss SMT GmbH, 73447 Oberkochen, Rudolf-Eber-Strasse 2, Germany

J. Micro/Nanolith. MEMS MOEMS. 15(2), 021205 (Mar 01, 2016). doi:10.1117/1.JMM.15.2.021205
History: Received November 26, 2015; Accepted January 29, 2016
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Abstract.  The mask plays a significant role as an active optical element in lithography, for both deep ultraviolet (DUV) and extreme ultraviolet (EUV) lithography. Mask-induced and feature-dependent shifts of the best-focus position and other aberration-like effects were reported both for DUV immersion and for EUV lithography. We employ rigorous computation of light diffraction from lithographic masks in combination with aerial image simulation to study the root causes of these effects and their dependencies from mask and optical system parameters. Special emphasis is put on the comparison of transmission masks for DUV lithography and reflective masks for EUV lithography, respectively. Several strategies to compensate the mask-induced phase effects are discussed.

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© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Andreas Erdmann ; Peter Evanschitzky ; Jens Timo Neumann and Paul Gräupner
"Mask-induced best-focus shifts in deep ultraviolet and extreme ultraviolet lithography", J. Micro/Nanolith. MEMS MOEMS. 15(2), 021205 (Mar 01, 2016). ; http://dx.doi.org/10.1117/1.JMM.15.2.021205


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