Special Section on Photomask Manufacturing Technology

Study of extreme ultraviolet lithography patterned mask inspection tool for half-pitch 11-nm node defect detection performance

[+] Author Affiliations
Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Hidehiro Watanabe

EUVL Infrastructure Development Center, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-0053, Japan

Masahiro Hatakeyama, Takeshi Murakami, Shoji Yoshikawa, Kenichi Suematsu, Kenji Terao

Ebara Corporation, 4-2-1, Honfujisawa, Fujisawa 251-0875, Japan

J. Micro/Nanolith. MEMS MOEMS. 15(2), 021008 (Mar 08, 2016). doi:10.1117/1.JMM.15.2.021008
History: Received October 15, 2015; Accepted February 16, 2016
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Abstract.  Extreme ultraviolet lithography (EUVL) patterned mask defect detection is one of the major issues to overcome for realization of EUVL-based device fabrication. We have designed projection electron microscope (PEM) optics that have been integrated into a new inspection system called EBEYE-V30 (“Model EBEYE” is EBARA’s model code), and the PEM system performs well in half-pitch (hp) 16-nm node EUVL patterned mask inspection applications. We also discuss the extendibility of this system to 11-nm node defect detection. The progress made in the performance of the PEM optics is not simply about producing an image sensor with higher resolution but is also about improvement of the image processing to enhance the defect signal. A high-speed image sensor, a high-speed image-processing circuit, and a bright and stable electron source are necessary for hp 11-nm defect inspection. We describe the experimental results for EUVL patterned mask inspection using the above system for the hp 11-nm node. Programmed hp 11-nm defects (equivalent to 44 nm on the mask) are used for defect detection sensitivity evaluation. Defects as small as 16 nm on the mask could be detected using the current PEM system configuration.

Figures in this Article
© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Ryoichi Hirano ; Susumu Iida ; Tsuyoshi Amano ; Hidehiro Watanabe ; Masahiro Hatakeyama, et al.
"Study of extreme ultraviolet lithography patterned mask inspection tool for half-pitch 11-nm node defect detection performance", J. Micro/Nanolith. MEMS MOEMS. 15(2), 021008 (Mar 08, 2016). ; http://dx.doi.org/10.1117/1.JMM.15.2.021008


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