Special Section on Photomask Manufacturing Technology

Accurate mask model implementation in optical proximity correction model for 14-nm nodes and beyond

[+] Author Affiliations
Nacer Zine El Abidine

STMicroelectronics, 850, rue Jean Monnet, F 38926 Crolles Cedex, France

Institut de Microélectronique, Electromagnétisme et Photonique–Laboratoire d’Hyperfréquences et Caractérisation, Minatec, 3 rue Parvis Louis Néel, CS 50257, 38016 Grenoble Cedex 1, France

Frank Sundermann, Emek Yesilada, Vincent Farys

STMicroelectronics, 850, rue Jean Monnet, F 38926 Crolles Cedex, France

Frederic Huguennet, Ana-Maria Armeanu, Michael Chomat

Mentor Graphics Corporation, 110 Rue Blaise Pascal, 38330 Montbonnot-Saint-Martin, France

Ingo Bork, Peter Buck

Mentor Graphics Corporation, 46871 Bayside Parkway Fremont, California 94538, United States

Isabelle Schanen

Institut de Microélectronique, Electromagnétisme et Photonique–Laboratoire d’Hyperfréquences et Caractérisation, Minatec, 3 rue Parvis Louis Néel, CS 50257, 38016 Grenoble Cedex 1, France

J. Micro/Nanolith. MEMS MOEMS. 15(2), 021011 (Apr 27, 2016). doi:10.1117/1.JMM.15.2.021011
History: Received October 30, 2015; Accepted February 24, 2016
Text Size: A A A

Abstract.  In a previous work, we demonstrated that the current optical proximity correction model assuming the mask pattern to be analogous to the designed data is no longer valid. An extreme case of line-end shortening shows a gap up to 10 nm difference (at mask level). For that reason, an accurate mask model has been calibrated for a 14-nm logic gate level. A model with a total RMS of 1.38 nm at mask level was obtained. Two-dimensional structures, such as line-end shortening and corner rounding, were well predicted using scanning electron microscopy pictures overlaid with simulated contours. The first part of this paper is dedicated to the implementation of our improved model in current flow. The improved model consists of a mask model capturing mask process and writing effects, and a standard optical and resist model addressing the litho exposure and development effects at wafer level. The second part will focus on results from the comparison of the two models, the new and the regular.

© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Nacer Zine El Abidine ; Frank Sundermann ; Emek Yesilada ; Vincent Farys ; Frederic Huguennet, et al.
"Accurate mask model implementation in optical proximity correction model for 14-nm nodes and beyond", J. Micro/Nanolith. MEMS MOEMS. 15(2), 021011 (Apr 27, 2016). ; http://dx.doi.org/10.1117/1.JMM.15.2.021011


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