Special Section on Control of Integrated Circuit Patterning Variance, Part 2: Image Placement, Device Overlay, and Critical Dimension

Intrafield overlay correction for illumination-based distortion

[+] Author Affiliations
Michael Pike, Timothy Brunner, Bradley Morgenfeld, Nan Jing, Timothy Wiltshire

GLOBALFOUNDRIES Inc., Research and Development, 2070 Route 52, East Fishkill, New York 12533, United States

J. Micro/Nanolith. MEMS MOEMS. 15(2), 021406 (May 02, 2016). doi:10.1117/1.JMM.15.2.021406
History: Received November 6, 2015; Accepted April 8, 2016
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Abstract.  The use of different illumination source shapes and multipatterning processes used to generate sub–40-nm images can create image placement errors level to level, resulting in significant intrafield overlay errors. These errors arise because of the impact of the different pupil shapes on lens aberrations resolving into image placement errors as well as because different tools will react differently to the same pupil shapes. We compare the impact of two extreme illumination sources on intrafield image placement and its effect on overall pattern overlay. We also discuss a method to empirically isolate and measure the amount of intrafield overlay distortion relative to a reference illumination source and then use the results to correct the resultant image placement errors.

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© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Michael Pike ; Timothy Brunner ; Bradley Morgenfeld ; Nan Jing and Timothy Wiltshire
"Intrafield overlay correction for illumination-based distortion", J. Micro/Nanolith. MEMS MOEMS. 15(2), 021406 (May 02, 2016). ; http://dx.doi.org/10.1117/1.JMM.15.2.021406


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