Lithography

Mask three-dimensional effects of etched multilayer mask for 16-nm half-pitch in extreme ultraviolet lithography

[+] Author Affiliations
Guk-Jin Kim, In-Seon Kim, Hye-Keun Oh

Hanyang University, Department of Applied Physics, 55, Hanyangdaehak-ro, Sangrok-gu, Ansan-si, Gyeonggi-do 15588, Republic of Korea

Michael Yeung

Fastlitho, 470 South 2nd Street, San Jose, California 95126, United States

J. Micro/Nanolith. MEMS MOEMS. 15(2), 023503 (May 09, 2016). doi:10.1117/1.JMM.15.2.023503
History: Received October 23, 2015; Accepted April 18, 2016
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Abstract.  The absorber stack on the conventional mask in extreme ultraviolet (EUV) lithography technology leads to mask three-dimensional (3-D) effects including horizontal–vertical (H–V) bias and position shifts through focus. To overcome these problems, we revisit the etched multilayer mask structure. We focus on the etched multilayer mask structure process down to a 16-nm half-pitch at a 0.33 numerical aperture, and we compare the results from this mask to those obtained with a conventional mask. Removing the absorber stack makes the H–V bias of an etched multilayer mask smaller than that of a conventional absorber mask for a 16-nm half-pitch. Thus, the etched multilayer mask can be used to reduce the mask 3-D effects.

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© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Guk-Jin Kim ; In-Seon Kim ; Michael Yeung and Hye-Keun Oh
"Mask three-dimensional effects of etched multilayer mask for 16-nm half-pitch in extreme ultraviolet lithography", J. Micro/Nanolith. MEMS MOEMS. 15(2), 023503 (May 09, 2016). ; http://dx.doi.org/10.1117/1.JMM.15.2.023503


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