Metrology

Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process

[+] Author Affiliations
Keiichiro Hitomi, Nobuhiro Okai, Shoji Hotta, Atuko Yamaguchi

Hitachi Ltd., Central Research Laboratory, Nano-Process Research Department, 1-280 Higashi-Koigakubo, Kokubunji-shi, Tokyo 185-8601, Japan

Scott Halle, Nicole Saulnier, Derren Dunn

IBM Corp., 257 Fuller Road, Suite 3100, Albany, New York 12203, United States

Marshal Miller, Ioana Graur

IBM Corp., 2070 Route 52, Hopewell Junction, New York 12533, United States

Hitoshi Komuro, Shunsuke Koshihara, Yutaka Hojo

Hitachi-HighTechnologies Corporation, 882 Ichige, Hitachinaka-Shi, Ibaraki 312-8504, Japan

Toru Ishimoto

Hitachi-HighTechnologies Corporation, 24-14, Nishi-Shimbashi, 1-Chome, Minato-ku, Tokyo 105-8717, Japan

J. Micro/Nanolith. MEMS MOEMS. 15(3), 034002 (Jul 19, 2016). doi:10.1117/1.JMM.15.3.034002
History: Received September 26, 2015; Accepted June 15, 2016
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Abstract.  The model accuracy of optical proximity-effect correction (OPC) was investigated by two modeling methods for a 10-nm node process. The first method is to use contours of two-dimensional structures extracted from critical dimension-scanning electron microscope (CD-SEM) images combined with conventional CDs of one-dimensional structures. The accuracy of this hybrid OPC model was compared with that of a conventional OPC model, which was created with only CD data, in terms of root-mean-square (RMS) error for metal and contact layers of 10-nm node logic devices. Results showed improvement of model accuracy with the use of hybrid OPC modeling by 23% for contact layer and 18% for metal layer, respectively. The second method is to apply a correction technique for resist shrinkage caused by CD-SEM measurement to extracted contours for improving OPC model accuracy. The accuracy of OPC model with shrink correction was compared with that without shrink correction, and total RMS error was decreased by 12% by using the shrink correction technique. It can be concluded that the use of CD-SEM contours and the shrink correction of contours are effective to improve the accuracy of OPC model for the 10-nm node process.

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© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Keiichiro Hitomi ; Scott Halle ; Marshal Miller ; Ioana Graur ; Nicole Saulnier, et al.
"Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process", J. Micro/Nanolith. MEMS MOEMS. 15(3), 034002 (Jul 19, 2016). ; http://dx.doi.org/10.1117/1.JMM.15.3.034002


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