Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process

Keiichiro Hitomi; Scott Halle; Marshal Miller; Ioana Graur; Nicole Saulnier; Derren Dunn; Nobuhiro Okai; Shoji Hotta; Atuko Yamaguchi; Hitoshi Komuro; Toru Ishimoto; Shunsuke Koshihara; Yutaka Hojo

doi:10.1117/1.JMM.15.3.034002

19 July 2016 Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process

Keiichiro Hitomi, Scott Halle, Marshal Miller, Ioana Graur, Nicole Saulnier, Derren Dunn, Nobuhiro Okai, Shoji Hotta, Atuko Yamaguchi, Hitoshi Komuro, Toru Ishimoto, Shunsuke Koshihara, Yutaka Hojo

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 15, Issue 3, 034002 (July 2016). https://doi.org/10.1117/1.JMM.15.3.034002

Abstract

The model accuracy of optical proximity-effect correction (OPC) was investigated by two modeling methods for a 10-nm node process. The first method is to use contours of two-dimensional structures extracted from critical dimension-scanning electron microscope (CD-SEM) images combined with conventional CDs of one-dimensional structures. The accuracy of this hybrid OPC model was compared with that of a conventional OPC model, which was created with only CD data, in terms of root-mean-square (RMS) error for metal and contact layers of 10-nm node logic devices. Results showed improvement of model accuracy with the use of hybrid OPC modeling by 23% for contact layer and 18% for metal layer, respectively. The second method is to apply a correction technique for resist shrinkage caused by CD-SEM measurement to extracted contours for improving OPC model accuracy. The accuracy of OPC model with shrink correction was compared with that without shrink correction, and total RMS error was decreased by 12% by using the shrink correction technique. It can be concluded that the use of CD-SEM contours and the shrink correction of contours are effective to improve the accuracy of OPC model for the 10-nm node process.

Citation Download Citation

Keiichiro Hitomi, Scott Halle, Marshal Miller, Ioana Graur, Nicole Saulnier, Derren Dunn, Nobuhiro Okai, Shoji Hotta, Atuko Yamaguchi, Hitoshi Komuro, Toru Ishimoto, Shunsuke Koshihara, and Yutaka Hojo "Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(3), 034002 (19 July 2016). https://doi.org/10.1117/1.JMM.15.3.034002

Published: 19 July 2016

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available