Lithography

High aspect ratio patterning of photosensitive polyimide with low thermal expansion coefficient and low dielectric constant

[+] Author Affiliations
Andrew R. Dick, Brendan Luke, Erin Maines

University of Texas at Austin, McKetta Department of Chemical Engineering, 200 East Dean Keeton Street, Stop C0400, Austin, Texas 78712, United States

William K. Bell

University of Texas at Austin, Department of Chemistry, 105 East 24th Street, Stop A5300, Austin, Texas 78712, United States

Brennen Mueller, Paul A. Kohl

Georgia Institute of Technology, School of Chemical and Biomolecular Engineering, 311 Ferst Drive NW, Atlanta, Georgia 30332, United States

Brandon Rawlings

Intel Corporation, 5000 West Chandler Boulevard, Chandler, Arizona 85226, United States

C. Grant Willson

University of Texas at Austin, McKetta Department of Chemical Engineering, 200 East Dean Keeton Street, Stop C0400, Austin, Texas 78712, United States

University of Texas at Austin, Department of Chemistry, 105 East 24th Street, Stop A5300, Austin, Texas 78712, United States

J. Micro/Nanolith. MEMS MOEMS. 15(3), 033503 (Jul 26, 2016). doi:10.1117/1.JMM.15.3.033503
History: Received April 5, 2016; Accepted July 5, 2016
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Abstract.  A photosensitive polyimide system based on amine catalyzed imidization of a precursor poly(amic ester) is described. The material is based on the meta ethyl ester of pyromellitic dianhydride and 2,2’ bis(trifluoromethyl)benzidine. It acts as a negative tone resist when formulated with a photobase generator. The material exhibits a dielectric constant of 3.0 in the gigahertz range, a coefficient of thermal expansion of 6±2  ppm/K, and can be patterned to aspect ratios of >2 when formulated with a highly quantum efficient cinnamide type photobase generator.

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© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Andrew R. Dick ; William K. Bell ; Brendan Luke ; Erin Maines ; Brennen Mueller, et al.
"High aspect ratio patterning of photosensitive polyimide with low thermal expansion coefficient and low dielectric constant", J. Micro/Nanolith. MEMS MOEMS. 15(3), 033503 (Jul 26, 2016). ; http://dx.doi.org/10.1117/1.JMM.15.3.033503


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