Photolithography reaches 6 nm half-pitch using extreme ultraviolet light

Daniel Fan; Yasin Ekinci

doi:10.1117/1.JMM.15.3.033505

1 August 2016 Photolithography reaches 6 nm half-pitch using extreme ultraviolet light

Daniel Fan, Yasin Ekinci

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 15, Issue 3, 033505 (August 2016). https://doi.org/10.1117/1.JMM.15.3.033505

Abstract

Extreme ultraviolet interference lithography records the interference pattern of two diffracted, coherent light beams, where the pattern resolution is half the diffraction grating resolution. The fabrication of diffraction grating masks by e-beam lithography is restricted by the electron proximity effect and pattern transfer limitations into diffraction efficient materials. By patterning HSQ lines at a relaxed pitch to avoid the electron proximity effect, depositing conformal iridium via atomic layer deposition, followed by ion milling the top and bottom iridium and HSQ removal, we fabricated iridium diffraction gratings at double the line spacing of the original HSQ lines. Line/space patterns of 6-nm half-pitch patterns were achieved using these masks, marking a new record resolution in photolithography.

Citation Download Citation

Daniel Fan and Yasin Ekinci "Photolithography reaches 6 nm half-pitch using extreme ultraviolet light," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(3), 033505 (1 August 2016). https://doi.org/10.1117/1.JMM.15.3.033505

Published: 1 August 2016

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