Lithography

Dynamic absorption coefficients of chemically amplified resists and nonchemically amplified resists at extreme ultraviolet

[+] Author Affiliations
Roberto Fallica, Yasin Ekinci

Paul Scherrer Institute, 5232 Villigen PSI, Switzerland

Jason K. Stowers, Andrew Grenville

Inpria Corporation, 2001 NW Monroe Avenue, Suite 203, Corvallis, Oregon 97330, United States

Andreas Frommhold, Alex P. G. Robinson

University of Birmingham, School of Chemical Engineering, Edgbaston, Birmingham B15 2TT, United Kingdom

J. Micro/Nanolith. MEMS MOEMS. 15(3), 033506 (Aug 08, 2016). doi:10.1117/1.JMM.15.3.033506
History: Received May 4, 2016; Accepted July 12, 2016
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Abstract.  The dynamic absorption coefficients of several chemically amplified resists (CAR) and non-CAR extreme ultraviolet (EUV) photoresists are measured experimentally using a specifically developed setup in transmission mode at the x-ray interference lithography beamline of the Swiss Light Source. The absorption coefficient α and the Dill parameters ABC were measured with unprecedented accuracy. In general, the α of resists match very closely with the theoretical value calculated from elemental densities and absorption coefficients, whereas exceptions are observed. In addition, through the direct measurements of the absorption coefficients and dose-to-clear values, we introduce a new figure of merit called chemical sensitivity to account for all the postabsorption chemical reaction ongoing in the resist, which also predicts a quantitative clearing volume and clearing radius, due to the photon absorption in the resist. These parameters may help provide deeper insight into the underlying mechanisms of the EUV concepts of clearing volume and clearing radius, which are then defined and quantitatively calculated.

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© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Roberto Fallica ; Jason K. Stowers ; Andrew Grenville ; Andreas Frommhold ; Alex P. G. Robinson, et al.
"Dynamic absorption coefficients of chemically amplified resists and nonchemically amplified resists at extreme ultraviolet", J. Micro/Nanolith. MEMS MOEMS. 15(3), 033506 (Aug 08, 2016). ; http://dx.doi.org/10.1117/1.JMM.15.3.033506


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