Lithography

Energy deposition in ultrathin extreme ultraviolet resist films: extreme ultraviolet photons and keV electrons

[+] Author Affiliations
David F. Kyser, Nicholas K. Eib

Consultant, San Jose, California 95120, United States

Nicholas W. M. Ritchie

National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899, United States

J. Micro/Nanolith. MEMS MOEMS. 15(3), 033507 (Aug 23, 2016). doi:10.1117/1.JMM.15.3.033507
History: Received April 4, 2016; Accepted August 2, 2016
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Abstract.  The absorbed energy density (eV/cm3) deposited by extreme ultraviolet (EUV) photons and electron beam (EB) high-keV electrons is proposed as a metric for characterizing the sensitivity of EUV resist films. Simulations of energy deposition are used to calculate the energy density as a function of the incident aerial flux (EUV: mJ/cm2, EB: μC/cm2). Monte Carlo calculations for electron exposure are utilized, and a Lambert–Beer model for EUV absorption. The ratio of electron flux to photon flux which results in equivalent energy density is calculated for a typical organic chemically amplified resist film and a typical inorganic metal-oxide film. This ratio can be used to screen EUV resist materials with EB measurements and accelerate advances in EUV resist systems.

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© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

David F. Kyser ; Nicholas K. Eib and Nicholas W. M. Ritchie
"Energy deposition in ultrathin extreme ultraviolet resist films: extreme ultraviolet photons and keV electrons", J. Micro/Nanolith. MEMS MOEMS. 15(3), 033507 (Aug 23, 2016). ; http://dx.doi.org/10.1117/1.JMM.15.3.033507


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