We first investigate the effect of oxygen-doping concentration on resistive switching (RS) behaviors in , which were prepared by a radio frequency magnetron sputtering at the oxygen partial pressure ranging from 0% to 6%. Bipolar RS behaviors were achieved in all the fabricated devices and all these devices are valence change memories. With the oxygen partial pressure increasing from 0% to 6% (sample-0% has 40 at. % of oxygen), the mean increases from 4.5 to and then decreases to , indicating that the device exhibits the largest ON/OFF ratio at the oxygen partial pressure of about 2%. Based on the analyses of x-ray photoelectron spectroscopy, fitting current–voltage curves, and resistance–temperature measurements, it is clear that the trap filled limit space charge limited current and a Schottky barrier in the interface of the film and are suggested to be dominant in the positive and negative biases, respectively. Most importantly, all devices can keep the data more than and endure more than continuous cycles, thus confirming the nonvolatile properties.