Microelectromechanical Systems (MEMS)

Fabrication and analysis of radiofrequency MEMS series capacitive single-pole double-throw switch

[+] Author Affiliations
Deepak Bansal, Kamaljit Rangra

Council of Scientific and Industrial Research-Central Electronics Engineering Research Institute, Pilani, Rajasthan 333031, India

Academy of Scientific and Innovative Research, Council of Scientific and Industrial Research Campus, CSIR Road, Taramani, Chennai 600113, India

Anuroop Bajpai, Prem Kumar, Maninder Kaur

Council of Scientific and Industrial Research-Central Electronics Engineering Research Institute, Pilani, Rajasthan 333031, India

J. Micro/Nanolith. MEMS MOEMS. 15(4), 045001 (Oct 06, 2016). doi:10.1117/1.JMM.15.4.045001
History: Received June 21, 2016; Accepted September 23, 2016
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Abstract.  A compact radiofrequency (RF) MEMS single-pole double-throw (SPDT) switch based on series capacitive configuration is proposed. The critical process parameters are analyzed to improve the fabrication process. A technique of cold–hot thermal shock for lift-off method is explored. The residual stress in the structure is quantified by lancet test structures that come out to be 51 MPa. Effect of residual stress on actuation voltage is explored, which changes its value from 24 to 22 V. Resonance frequency and switching speed of the switch are 11 kHz and 44  μs, respectively, measured using laser Doppler vibrometer. Measured bandwidth of the SPDT switch is 20 GHz (5 to 25 GHz), which is verified with finite element method simulations in high frequency structure simulator© and an equivalent LCR circuit in advanced design system©. Insertion loss of the switch lies in 0.1 to 0.5  dB with isolation better than 20  dB for the above-mentioned bandwidth.

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© 2016 Society of Photo-Optical Instrumentation Engineers

Citation

Deepak Bansal ; Anuroop Bajpai ; Prem Kumar ; Maninder Kaur and Kamaljit Rangra
"Fabrication and analysis of radiofrequency MEMS series capacitive single-pole double-throw switch", J. Micro/Nanolith. MEMS MOEMS. 15(4), 045001 (Oct 06, 2016). ; http://dx.doi.org/10.1117/1.JMM.15.4.045001


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